Double‐Gate MoS 2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits-Reference-Cited by-同舟云学术

Double‐Gate MoS 2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Published:2021-05-31 Issue:27 Volume:33 Page:2101036
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Yi Jiali¹,Sun Xingxia¹,Zhu Chenguang¹,Li Shengman¹,Liu Yong¹,Zhu Xiaoli¹,You Wenxia¹,Liang Delang¹,Shuai Qin¹,Wu Yanqing²,Li Dong¹,Pan Anlian¹^ORCID

Affiliation:

1. Key Laboratory for Micro‐Nano Physics and Technology of Hunan Province College of Materials Science and Engineering Hunan University Changsha 410082 P. R. China

2. Wuhan National High Magnetic Field Center and School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202101036

Reference38 articles.

1. Device scaling limits of Si MOSFETs and their application dependencies

2. The chips are down for Moore’s law

3. Less is Moore

4. Demands are high for low-power electronics

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