Sub‐Picosecond Non‐Equilibrium States in the Amorphous Phase of GeTe Phase‐Change Material Thin Films-Reference-Cited by-同舟云学术

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Sub‐Picosecond Non‐Equilibrium States in the Amorphous Phase of GeTe Phase‐Change Material Thin Films

Published:2021-08-24 Issue:41 Volume:33 Page:2102721
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Martinez Paloma¹^ORCID,Blanchet Valérie¹^ORCID,Descamps Dominique¹^ORCID,Dory Jean‐Baptiste²^ORCID,Fourment Claude¹³,Papagiannouli Irène¹^ORCID,Petit Stéphane¹^ORCID,Raty Jean‐Yves²⁴^ORCID,Noé Pierre²^ORCID,Gaudin Jérôme¹^ORCID

Affiliation:

1. CELIA Université Bordeaux, CEA, CNRS UMR 5107, 351 Cours de la Libération Talence F‐33405 France

2. Université Grenoble Alpes, CEA, LETI 17 rue des Martyrs Grenoble Cedex 9 F‐38000 France

3. CEA‐CESTA 15 avenue des Sablières, CS 60001 Le Barp CEDEX F‐33116 France

4. FRS‐FNRS and CESAM University of Liège Allée du 6 Août 19 Sart‐Tilman 4000 Belgium

Funder

Agence Nationale de la Recherche

Fonds De La Recherche Scientifique - FNRS

Service Public de Wallonie

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202102721

Reference67 articles.

1. Reversible Electrical Switching Phenomena in Disordered Structures

2. Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed

3. Phase-change materials for rewriteable data storage

4. Origin, secret, and application of the ideal phase-change material GeSbTe

5. J.Choe Tech Insights Intel 3D XPoint Memory Die Removed from Intel Optane PCM (Phase Change Memory) 2017.

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