Flexible, Transparent, and Wafer‐Scale Artificial Synapse Array Based on TiOx/Ti3C2Tx Film for Neuromorphic Computing

Abstract

AbstractA high‐density neuromorphic computing memristor array based on 2D materials paves the way for next‐generation information‐processing components and in‐memory computing systems. However, the traditional 2D‐materials‐based memristor devices suffer from poor flexibility and opacity, which hinders the application of memristors in flexible electronics. Here, a flexible artificial synapse array based on TiOx/Ti3C2Tx film is fabricated by a convenient and energy‐efficient solution‐processing technique, which realizes high transmittance (≈90%) and oxidation resistance (>30 days). The TiOx/Ti3C2Tx memristor shows low device‐to‐device variability, long memory retention and endurance, a high ON/OFF ratio, and fundamental synaptic behavior. Furthermore, satisfactory flexibility (R = 1.0 mm) and mechanical endurance (104 bending cycles) of the TiOx/Ti3C2Tx memristor are achieved, which is superior to other film memristors prepared by chemical vapor deposition. In addition, high‐precision (>96.44%) MNIST handwritten digits recognition classification simulation indicates that the TiOx/Ti3C2Tx artificial synapse array holds promise for future neuromorphic computing applications, and provides excellent high‐density neuron circuits for new flexible intelligent electronic equipment.