5 nm Ultrathin Crystalline Ferroelectric P(VDF‐TrFE)‐Brush Tuned for Hysteresis‐Free Sub 60 mV dec−1 Negative‐Capacitance Transistors

Abstract

AbstractNegative‐capacitance field‐effect transistors (NC‐FETs) have gathered enormous interest as a way to reduce subthreshold swing (SS) and overcome the issue of power dissipation in modern integrated circuits. For stable NC behavior at low operating voltages, the development of ultrathin ferroelectrics (FE), which are compatible with the industrial process, is of great interest. Here, a new scalable ultrathin ferroelectric polymer layer is developed based on trichloromethyl (CCl3)‐terminated poly(vinylidene difluoride‐co‐trifloroethylene) (P(VDF‐TrFE)) to achieve the state‐of‐the‐art performance of NC‐FETs. The crystalline phase of 5–10 nm ultrathin P(VDF‐TrFE) is prepared on AlOX by a newly developed brush method, which enables an FE/dielectric (DE) bilayer. FE/DE thickness ratios are then systematically tuned at ease to achieve ideal capacitance matching. NC‐FETs with optimized FE/DE thickness at a thickness limit demonstrate hysteresis‐free operation with an SS of 28 mV dec−1 at ≈1.5 V, which competes with the best reports. This P(VDF‐TrFE)‐brush layer can be broadly adapted to NC‐FETs, opening an exciting avenue for low‐power devices.