Spin–Orbit Torque‐Induced Domain Nucleation for Neuromorphic Computing-Reference-Cited by-同舟云学术

Spin–Orbit Torque‐Induced Domain Nucleation for Neuromorphic Computing

Published:2021-07-24 Issue:36 Volume:33 Page:2103672
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Zhou Jing¹^ORCID,Zhao Tieyang¹,Shu Xinyu¹,Liu Liang¹,Lin Weinan¹,Chen Shaohai¹,Shi Shu¹,Yan Xiaobing²,Liu Xiaogang³,Chen Jingsheng¹⁴^ORCID

Affiliation:

1. Department of Materials Science & Engineering National University of Singapore Singapore 117575 Singapore

2. Key Laboratory of Brain‐like Neuromorphic Devices and Systems of Hebei Province Key Laboratory of Optoelectronic Information Materials of Hebei Province Hebei University Baoding Hebei 071002 China

3. Department of Chemistry National University of Singapore Singapore 117543 Singapore

4. Suzhou Research Institute National University of Singapore Suzhou 215123 China

Funder

National Research Foundation Singapore

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202103672

Reference42 articles.

1. Pathways to efficient neuromorphic computing with non-volatile memory technologies

2. Towards spike-based machine intelligence with neuromorphic computing

3. Neuromorphic spintronics

4. Encoding neural and synaptic functionalities in electron spin: A pathway to efficient neuromorphic computing

5. Emerging neuromorphic devices

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