Defect‐Enhanced Polarization Switching in the Improper Ferroelectric LuFeO 3-Reference-Cited by-同舟云学术

Defect‐Enhanced Polarization Switching in the Improper Ferroelectric LuFeO 3

Published:2020-04-29 Issue:23 Volume:32 Page:2000508
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Barrozo Petrucio¹²³^ORCID,Småbråten Didrik René⁴,Tang Yun‐Long²³,Prasad Bhagwati²,Saremi Sahar²,Ozgur Rustem²,Thakare Vishal²,Steinhardt Rachel A.⁵,Holtz Megan E.⁵,Stoica Vladimir Alexandru⁶,Martin Lane W.²³,Schlom Darrel G.⁵,Selbach Sverre Magnus⁴,Ramesh Ramamoorthy²³

Affiliation:

1. Physics Department Federal University of Sergipe São Cristóvão Sergipe 49100‐000 Brazil

2. Department of Materials Science and Engineering and Department of Physics University of California Berkeley CA 94720 USA

3. Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA

4. Department of Materials Science and Engineering NTNU Norwegian University of Science and Technology Norway

5. Department of Materials Science and Engineering Cornell University Ithaca NY 15805 USA

6. Department of Materials Science and Engineering Pennsylvania State University University Park PA 16802 USA

Funder

Norges Forskningsråd

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

U.S. Department of Energy

Office of Science

Basic Energy Sciences

National Science Foundation

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202000508

Reference54 articles.

1. Giant tunnel electroresistance for non-destructive readout of ferroelectric states

2. Preparation and basic properties of PbTiO3ferroelectric thin films and their device applications

3. Thin Film Piezoelectrics for MEMS

4. Crystal structure and magnetic properties of hexagonalRMnO3(R=Y,Lu, and Sc) and the effect of doping

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