Affiliation:
1. Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA 02139 USA
2. Department of Materials Engineering Auburn University Auburn AL 36849 USA
3. Department of Mechanical Engineering Massachusetts Institute of Technology Cambridge MA 02139 USA
Abstract
AbstractThis work characterizes the structural, magnetic, and ferroelectric properties of epitaxial LuFeO3 orthoferrite thin films with different Lu/Fe ratios. LuFeO3 thin films are grown by pulsed laser deposition on SrTiO3 substrates with Lu/Fe ratio ranging from 0.6 to 1.5. LuFeO3 is antiferromagnetic with a weak canted moment perpendicular to the film plane. Piezoresponse force microscopy imaging and switching spectroscopy reveal room temperature ferroelectricity in Lu‐rich and Fe‐rich films, whereas the stoichiometric film shows little polarization. Ferroelectricity in Lu‐rich films is present for a range of deposition conditions and crystallographic orientations. Positive‐up‐negative‐down ferroelectric measurements on a Lu‐rich film yield ≈13 µC cm−2 of switchable polarization, although the film also shows electrical leakage. The ferroelectric response is attributed to antisite defects analogous to that of Y‐rich YFeO3, yielding multiferroicity via defect engineering in a rare earth orthoferrite.
Funder
U.S. Department of Defense
National Science Foundation
Subject
Electronic, Optical and Magnetic Materials