Temperature‐Dependent Electronic Ground‐State Charge Transfer in van der Waals Heterostructures-Reference-Cited by-同舟云学术

Temperature‐Dependent Electronic Ground‐State Charge Transfer in van der Waals Heterostructures

Published:2021-05-25 Issue:29 Volume:33 Page:2008677
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Park Soohyung¹^ORCID,Wang Haiyuan²³,Schultz Thorsten⁴⁵^ORCID,Shin Dongguen⁴^ORCID,Ovsyannikov Ruslan⁵,Zacharias Marios²⁶,Maksimov Dmitrii²⁷,Meissner Matthias⁸,Hasegawa Yuri⁸,Yamaguchi Takuma⁸,Kera Satoshi⁸,Aljarb Areej⁹,Hakami Mariam⁹,Li Lain‐Jong⁹¹⁰,Tung Vincent⁹,Amsalem Patrick⁴,Rossi Mariana²⁷^ORCID,Koch Norbert⁴⁵^ORCID

Affiliation:

1. Advanced Analysis Center Korea Institute of Science and Technology (KIST) Seoul 02792 South Korea

2. Fritz Haber Institute of the Max Planck Society 14195 Berlin Germany

3. Chaire de Simulation à l'Echelle Atomique (CSEA) Ecole Polytechnique Fédérale de Lausanne (EPFL) Lausanne CH‐1015 Switzerland

4. Humboldt‐Universität zu Berlin Institut für Physik and IRIS Adlershof 12489 Berlin Germany

5. Helmholtz‐Zentrum für Materialien und Energie GmbH 12489 Berlin Germany

6. Department of Mechanical and Materials Science Engineering Cyprus University of Technology Limassol 3603 Cyprus

7. Max Planck Institute for the Structure and Dynamics of Matter 22761 Hamburg Germany

8. Institute for Molecular Science Okazaki 444‐8585 Japan

9. Physical Sciences and Engineering King Abdullah University of Science and Technology Thuwal 23955‐6900 Saudi Arabia

10. Department of Mechanical Engineering The University of Hong Kong Pok Fu Lam Road Hong Kong China

Funder

Deutsche Forschungsgemeinschaft

National Research Foundation

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202008677

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