Indium Nitride at the 2D Limit-Reference-Cited by-同舟云学术

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Indium Nitride at the 2D Limit

Published:2020-11-23 Issue:1 Volume:33 Page:2006660
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Pécz Béla¹^ORCID,Nicotra Giuseppe²,Giannazzo Filippo²,Yakimova Rositsa³,Koos Antal¹,Kakanakova‐Georgieva Anelia³

Affiliation:

1. Centre for Energy Research Institute for Technical Physics and Materials Science Konkoly‐Thege M. út 29–33 Budapest 1121 Hungary

2. Consiglio Nazionale delle Ricerche Istituto per la Microelettronica e Microsistemi Strada VIII, n. 5, Zona Industriale Catania I‐95121 Italy

3. Department of Physics Chemistry and Biology (IFM) Linköping University Linköping 581 83 Sweden

Funder

Vetenskapsrådet

Nemzeti Kutatási Fejlesztési és Innovációs Hivatal

College of Science, Technology, Engineering, and Mathematics, Youngstown State University

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202006660

Reference25 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Spontaneous doping of the basal plane of MoS2 single layers through oxygen substitution under ambient conditions

3. Two-dimensional gallium nitride realized via graphene encapsulation

4. Two-dimensional gallium nitride

5. 2D AlN Layers Sandwiched Between Graphene and Si Substrates

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