Ni Single‐Atoms Based Memristors with Ultrafast Speed and Ultralong Data Retention

Author:

Li Hua‐Xin12,Li Qing‐Xiu1,Li Fu‐Zhi3,Liu Jia‐Peng4,Gong Guo‐Dong12,Zhang Yu‐Qi1,Leng Yan‐Bing1,Sun Tao1,Zhou Ye5,Han Su‐Ting26ORCID

Affiliation:

1. Institute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 P. R. China

2. College of Electronics and Information Engineering Shenzhen University Shenzhen 518060 P. R. China

3. Department of Chemistry Southern University of Science and Technology Shenzhen 518055 P. R. China

4. School of Advanced Energy Sun Yat‐Sen University Shenzhen 518107 P. R. China

5. Institute for Advanced Study Shenzhen University Shenzhen 518060 P. R. China

6. Department of Applied Biology and Chemical Technology The Hong Kong Polytechnic University Hung Hom, Kowloon Hong Kong 999077 P. R. China

Abstract

AbstractMemristor with low‐power, high density, and scalability fulfills the requirements of the applications of the new computing system beyond Moore's law. However, there are still nonideal device characteristics observed in the memristor to be solved. The important observation is that retention and speed are correlated parameters of memristor with trade off against each other. The delicately modulating distribution and trapping level of defects in electron migration‐based memristor is expected to provide a compromise method to address the contradictory issue of improving both switching speed and retention capability. Here, high‐performance memristor based on the structure of ITO/Ni single‐atoms (NiSAs/N‐C)/Polyvinyl pyrrolidone (PVP)/Au is reported. By utilizing well‐distributed trapping sites , small tunneling barriers/distance and high charging energy, the memristor with an ultrafast switching speed of 100 ns, ultralong retention capability of 106 s, a low set voltage (Vset) of ≈0.7 V, a substantial ON/OFF ration of 103, and low spatial variation in cycle‐to‐cycle (500 cycles) and device‐to‐device characteristics (128 devices) is demonstrated. On the premise of preserving the strengths of a fast switching speed, this memristor exhibits ultralong retention capability comparable to the commercialized flash memory. Finally, a memristor ratioed logic‐based combinational memristor array to realize the one‐bit full adder is further implemented.

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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