InGaP/GaAs/Ge triple-junction solar cells with ZnO nanowires-Reference-Cited by-同舟云学术

InGaP/GaAs/Ge triple-junction solar cells with ZnO nanowires

Published:2012-12-04 Issue:8 Volume:21 Page:1645-1652
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Hou Jei-Li¹,Chang Shoou-Jinn¹,Hsueh Ting-Jen²,Wu Chih-Hung³,Weng Wen-Yin¹,Shieh Jia-Min²

Affiliation:

1. Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Research Center for Energy Technology and Strategy; National Cheng Kung University; Tainan 701 Taiwan

2. National Nano Device Laboratories; Tainan-based Science Park Tainan 741 Taiwan

3. Institute of Nuclear Energy Research, Atomic Energy Council; Luchu Science Park Kaohsiung 821 Taiwan

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

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4. Multi-junction III-V solar cells: current status and future potential;Yamaguchi;Solar Energy,2005

5. Solar cell efficiency tables (version 39);Green;Progress in Photovoltaics: Research and Applications,2012

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