P‐12: Activation of IGZO Devices at 150°C via Reduction Process Using Hydrogen Gas During Sputtering
Author:
Affiliation:
1. Interdisciplinary Faculty of Science and Engineering Shimane University Shimane 690-8504 Japan
2. School of Environmental Science and Engineering Kochi University of Technology Kochi 782-8502 Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.14884
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3. Low-temperature all sputter igzo-tft fabricated with amorphous metal thin-films;Kearney D. R.;Dig. Tech. Pap. - SID Int. Symp.,2020
4. High-Mobility IGZO Thin-Film Transistors Fabricated on a Flexible PET Monofilament Fiber for Wearing Display;Kim C. Y.;Dig. Tech. Pap. - SID Int. Symp.,2020
5. High Transparent, Yltra-thin Flexible, Full color Mini-LED Display with IGZO TFT substrate;Sun Y.;Dig. Tech. Pap. - SID Int. Symp.,2020
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