Determination of size and density of embedded Ge nanocrystals in SiO2 by scanning force microscopy using a tomographic approach-Reference-Cited by-同舟云学术

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Determination of size and density of embedded Ge nanocrystals in SiO2 by scanning force microscopy using a tomographic approach

Published:2012-05-11 Issue:8 Volume:44 Page:1018-1021
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Beyer R.¹,von Borany J.²

Affiliation:

1. Beyer Associates; Yorckstrasse 58 D-09130 Chemnitz Germany

2. Helmholtz-Zentrum Dresden-Rossendorf; Institut für Ionenstrahlphysik und Materialforschung; D-01314 Dresden Germany

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sia.5007/fullpdf

Reference25 articles.

1. Visible photoluminescence from nanocrystallite Ge embedded in a glassySiO2matrix: Evidence in support of the quantum-confinement mechanism

2. Small silicon memories: confinement, single-electron,. and interface state considerations

3. Microstructure and electrical properties of gate SiO2 containing Ge nanoclusters for memory applications

4. Silicon nanocrystal memories

5. Silicon nanocrystal based memory devices for NVM and DRAM applications

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evolution of microstructural defects with strain effects in germanium nanocrystals synthesized at different annealing temperatures;Materials Characterization;2014-07

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