Evolution of microstructural defects with strain effects in germanium nanocrystals synthesized at different annealing temperatures-Reference-Cited by-同舟云学术

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Evolution of microstructural defects with strain effects in germanium nanocrystals synthesized at different annealing temperatures

Published:2014-07 Issue: Volume:93 Page:1-9
ISSN:1044-5803
Container-title:Materials Characterization
language:en
Short-container-title:Materials Characterization

Author:

Zhang Minghuan,Cai Rongsheng,Zhang Yujuan,Wang Chao,Wang Yiqian,Ross Guy G.,Barba David

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference28 articles.

1. Quantum confinement of volume plasmons and interband transitions in germanium nanocrystals

2. On the origin of visible photoluminescence in nanometer‐size Ge crystallites

3. Visible photoluminescence of Ge microcrystals embedded in SiO2glassy matrices

4. Photoluminescence induced from hot Ge implantation into SiO2

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1. Morphological analysis and grain size distribution of SnO₂ nanoparticles via digital image processing across diverse calcination temperatures;Journal of Microscopy;2023-11-05

2. Obtaining SiGe nanocrystallites between crystalline TiO2 layers by HiPIMS without annealing;Applied Surface Science;2020-05

3. Fabrication and characterization of Si1−xGex nanocrystals in as-grown and annealed structures: a comparative study;Beilstein Journal of Nanotechnology;2019-09-17

4. Blocking germanium diffusion inside silicon dioxide using a co-implanted silicon barrier;Journal of Applied Physics;2018-04-28

5. A Review on Ge Nanocrystals Embedded in SiO2and High-k Dielectrics;physica status solidi (a);2018-01-31

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