Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2 /Si gate capacitors-Reference-Cited by-同舟云学术

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Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2 /Si gate capacitors

Published:2014-05-15 Issue:7 Volume:46 Page:465-471
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Chandra Sekhar M.¹,Nanda Kumar Reddy N.¹,Venkata Rao B.²,Mohan Rao G.³,Uthanna S.²

Affiliation:

1. Department of Physics; Madanapalle Institute of Technology and Science; Madanapalle 517 325 India

2. Department of Physics; Sri Venkateswara University; Tirupati 517 502 India

3. Department of Instrumentation and Applied Physics; Indian Institute of Science; Bangalore 560 012 India

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sia.5538/fullpdf

Reference41 articles.

1. MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics

2. Low-Voltage, High-Performance Organic Field-Effect Transistors with an Ultra-Thin TiO2 Layer as Gate Insulator

3. GaAs metal–oxide–semiconductor device with titanium dioxide as dielectric layer: effect of oxide thickness on the device performance

4. Environmental Applications of Semiconductor Photocatalysis

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2. Performance improvement of n-TiO2/p-Si heterojunction by forming of n-TiO2/polyphenylene/p-Si anisotype sandwich heterojunction;Materials Science in Semiconductor Processing;2021-01

3. Leakage current and rectification behavior of Au / TiO2 / GaN junctions with TiO2 interlayer oxygen deposition pressure;Current Applied Physics;2020-01

4. The gamma irradiation responses of yttrium oxide capacitors and first assessment usage in radiation sensors;Sensors and Actuators A: Physical;2017-05

5. Tunable defect engineering in TiON thin films by multi-step sputtering processes: from a Schottky diode to resistive switching memory;Journal of Materials Chemistry C;2017

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