Thermal stability of high-κ oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories-Reference-Cited by-同舟云学术

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Thermal stability of high-κ oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories

Published:2012-06-05 Issue:1 Volume:45 Page:390-393
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Lamperti A.¹,Cianci E.¹,Salicio O.¹,Lamagna L.¹,Spiga S.¹,Fanciulli M.

Affiliation:

1. Laboratorio MDM; IMM-CNR; Via Olivetti 2; 20864; Agrate Brianza; MB; Italy

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference17 articles.

1. High-k dielectrics for future generation memory devices (Invited Paper)

2. High-κ gate dielectrics: Current status and materials properties considerations

3. High-κ Dielectric Materials for Microelectronics

4. Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

5. K. Kim J. Choi Proc. IEEE Non Volatile Semiconductor Memory Workshop 2006 9

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