Extremely low surface recombination velocities on low-resistivityn-type andp-type crystalline silicon using dynamically deposited remote plasma silicon nitride films-Reference-Cited by-同舟云学术

Extremely low surface recombination velocities on low-resistivityn-type andp-type crystalline silicon using dynamically deposited remote plasma silicon nitride films

Published:2012-12-17 Issue:6 Volume:22 Page:641-647
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Duttagupta Shubham¹²,Lin Fen¹,Wilson Marshall³,Boreland Matthew B.¹,Hoex Bram¹,Aberle Armin G.¹²

Affiliation:

1. Solar Energy Research Institute of Singapore; National University of Singapore; Singapore

2. Department of Electrical and Computer Engineering; National University of Singapore; Singapore

3. Semilab SDI LLC; Tampa FL USA

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference38 articles.

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3. Cuevas A Kerr MJ Schmidt J Passivation of crystalline silicon using silicon nitride Proceedings of 3rd World Conference on Photovoltaic Energy Conversion 2003 913 918

4. Defect passivation of industrial multicrystalline solar cells based on PECVD silicon nitride;Duerinckx;Solar Energy Materials and Solar Cells,2002

5. Recombination at the interface between silicon and stoichiometric plasma silicon nitride;Kerr;Semiconductor Science and Technology,2002

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