High efficiency large area n -type front junction silicon solar cells with boron emitter formed by screen printing technology-Reference-Cited by-同舟云学术

High efficiency large area n -type front junction silicon solar cells with boron emitter formed by screen printing technology

Published:2014-04-13 Issue:1 Volume:23 Page:119-123
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Ryu Kyungsun¹,Upadhyaya Ajay¹,Upadhyaya Vijaykumar¹,Rohatgi Ajeet¹,Ok Young-Woo¹

Affiliation:

1. University Center of Excellence for Photovoltaics Research and Education, School of Electrical and Computer Engineering; Georgia Institute of Technology; Atlanta GA 30332 USA

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pip.2486/fullpdf

Reference21 articles.

1. Minority carrier lifetime degradation in boron-doped Czochralski silicon;Glunz;Journal of Applied Physics,2001

2. Millisecond minority carrier lifetimes in n-type multicrystalline silicon;Cuevas;Applied Physics Letters,2002

3. Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon;Macdonald;Applied Physics Letters,2004

4. P-type versus n-type silicon wafers: prospects for high-efficiency commercial silicon solar cells;Cotter;IEEE Transactions on Electron Devices,2006

5. Homogeneous p + emitter diffused using boron tribromide for record 16.4% screen-printed large area n-type mc-Si solar cell;Komatsu;Solar Energy Materials and Solar Cells,2009

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1. Co-Diffusion Processing of p+/n/n+ Structure for n-Type Silicon Solar Cells Using Boron Doped Paper Sheets;Silicon;2020-11-09

2. Electrical internal quantum efficiency improved by interval doping method;Applied Optics;2018-11-30

3. Screen-printed contacts with H-patterned n-type passivated emitter rear totally diffused solar cell and front-side boron selective emitter formed by wet chemical etching;Japanese Journal of Applied Physics;2018-06-29

4. Co-diffusion of boron and phosphorus for ultra-thin crystalline silicon solar cells;Journal of Physics D: Applied Physics;2018-06-13

5. A One Step Method to Produce Boron Emitters;physica status solidi (a);2018-04-24