Screen-printed contacts with H-patterned n-type passivated emitter rear totally diffused solar cell and front-side boron selective emitter formed by wet chemical etching-Reference-Cited by-同舟云学术

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Screen-printed contacts with H-patterned n-type passivated emitter rear totally diffused solar cell and front-side boron selective emitter formed by wet chemical etching

Published:2018-06-29 Issue:8S3 Volume:57 Page:08RB09
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Simayi Shalamujiang,Kida Yasuhiro,Utsunomiya Satoshi,Shirasawa Katsuhiko,Takato Hidetaka

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=8S3/a=08RB09/pdf

Reference30 articles.

1. Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon

2. High Efficiency Rear Emitter Pert Cells on CZ and FZ N-Type Silicon Substrates

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fine line Al printing on narrow point contact opening for front side metallization;15th International Conference on Concentrator Photovoltaic Systems (CPV-15);2019

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