Ultra-Broadband Photodetector for the Visible to Terahertz Range by Self-Assembling Reduced Graphene Oxide-Silicon Nanowire Array Heterojunctions-Reference-Cited by-同舟云学术

Ultra-Broadband Photodetector for the Visible to Terahertz Range by Self-Assembling Reduced Graphene Oxide-Silicon Nanowire Array Heterojunctions

Published:2014-03-07 Issue:12 Volume:10 Page:2345-2351
ISSN:1613-6810
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language:en
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Author:

Cao Yang¹,Zhu Jiayi¹,Xu Jia²,He Junhui¹,Sun Jia-Lin³⁴,Wang Yingxin⁵,Zhao Ziran⁵

Affiliation:

1. Functional Nanomaterials Laboratory and Key Laboratory of Photochemical Conversion and Optoelectronic Materials; Technical Institute of Physics and Chemistry; Chinese Academy of Sciences (CAS); Zhongguancundonglu 29 Haidianqu Beijing 100190 China

2. Beijing Key Laboratory of Low-grade Energy Multiphase Flow and Heat Transfer; School of Renewable Energy; North China Electric Power University; Beijing 102206 China

3. State Key Laboratory of Low-Dimensional Quantum Physics; Department of Physics; Tsinghua University; Beijing 100084 China

4. Collaborative Innovation Center of Quantum Matter; Beijing China

5. Key Laboratory of Particle & Radiation Imaging (Tsinghua University); Ministry of Education; Department of Engineering Physics; Tsinghua University; Beijing 100084 China

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference31 articles.

1. GeSn/Ge heterostructure short-wave infrared photodetectors on silicon

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3. A multicolor, broadband (5–20 μm), quaternary-capped InAs/GaAs quantum dot infrared photodetector

4. Tandem organic photodetectors with tunable, broadband response

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