Ultra-High-Responsivity Broadband Detection of Si Metal–Semiconductor–Metal Schottky Photodetectors Improved by ZnO Nanorod Arrays-Reference-Cited by-同舟云学术

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Ultra-High-Responsivity Broadband Detection of Si Metal–Semiconductor–Metal Schottky Photodetectors Improved by ZnO Nanorod Arrays

Published:2011-10-03 Issue:10 Volume:5 Page:7748-7753
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Tsai Dung-Sheng¹²,Lin Chin-An¹,Lien Wei-Cheng¹³,Chang Hung-Chih¹,Wang Yuh-Lin²,He Jr-Hau¹

Affiliation:

1. Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan

2. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan

3. Berkeley Sensor and Actuator Center, University of California, Berkeley, California, United States

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn203357e

Reference43 articles.

1. Semiconductor ultraviolet detectors

2. Broad Spectral Response Using Carbon Nanotube/Organic Semiconductor/C60 Photodetectors

3. Solution-processed PbS quantum dot infrared photodetectors and photovoltaics

4. Broadband (8–14 μm), normal incidence, pseudomorphic GexSi1−x/Si strained‐layer infrared photodetector operating between 20 and 77 K

5. Ultraviolet enhanced Si-photodetector using p-NiO films

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