Carrier Transport and Photoresponse in GeSe/MoS 2 Heterojunction p–n Diodes
Author:
Affiliation:
1. Institute of Advanced Energy Kyoto University Uji Kyoto 611‐0011 Japan
2. Graduate School of Pure and Applied Sciences University of Tsukuba 1‐1‐1 Tennodai Tsukuba Ibaraki 305‐8571 Japan
Funder
Japan Society for the Promotion of Science
Japan Science and Technology Agency
Asahi Glass Foundation
Publisher
Wiley
Subject
Biomaterials,Biotechnology,General Materials Science,General Chemistry
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.201704559
Reference60 articles.
1. Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects
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5. Rhenium Dichalcogenides: Layered Semiconductors with Two Vertical Orientations
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