Flexible Nonvolatile Transistor Memory with Solution‐Processed Transition Metal Dichalcogenides-Reference-Cited by-同舟云学术

Flexible Nonvolatile Transistor Memory with Solution‐Processed Transition Metal Dichalcogenides

Published:2017-03-30 Issue:20 Volume:13 Page:1603971
ISSN:1613-6810
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language:en
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Author:

Kim Richard Hahnkee¹,Lee Jinseong¹,Kim Kang Lib¹,Cho Suk Man¹,Kim Dong Ha²,Park Cheolmin¹

Affiliation:

1. Department of Materials Science and Engineering Yonsei University 50 Yonsei‐ro Seodaemun‐gu Seoul 120‐749 Republic of Korea

2. Department of Chemistry and Nano Science Division of Molecular and Life Sciences College of Natural Sciences Ewha Womans University 52, Ewhayeodae‐gil Seodaemun‐gu Seoul 03760 Republic of Korea

Funder

National Research Foundation of Korea

Ministry of Education, Science and Technology

Air Force Office of Scientific Research

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.201603971

Reference68 articles.

1. Resistance Switching Characteristics of Solid Electrolyte Chalcogenide Ag2Se Nanoparticles for Flexible Nonvolatile Memory Applications

2. Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices

3. Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance

4. High-performance solution-processed polymer ferroelectric field-effect transistors

5. High Performance Multi-Level Non-Volatile Polymer Memory with Solution-Blended Ferroelectric Polymer/High-kInsulators for Low Voltage Operation

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