Light-Emitting Diodes: Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Dot Light-Emitting Diodes (Small 2/2014)

Author:

Yang Xuyong1,Mutlugun Evren12,Zhao Yongbiao1,Gao Yuan3,Leck Kheng Swee1,Ma Yanyan4,Ke Lin5,Tan Swee Tiam1,Demir Hilmi Volkan123,Sun Xiao Wei16

Affiliation:

1. Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering; Nanyang Technological University; Nanyang Avenue Singapore 639798 Singapore

2. Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology; Bilkent University; Bilkent, Ankara 06800 Turkey

3. School of Physical and Mathematical Sciences; Nanyang Technological University; Nanyang Avenue Singapore 639798 Singapore

4. State Key Lab of Luminescence Materials and Devices, Institute of Optical Communication Materials; South China University of Technology; Guangdong 510641 China

5. Institute of Materials Research and Engineering; A* STAR (Agency for Science, Technology and Research); 3 Research Link Singapore 117602 Singapore

6. South University of Science and Technology; 1088 Xue-Yuan Road Shenzhen Guangdong 518055 China

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

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