High‐Efficiency and Stable Quantum Dot Light‐Emitting Diodes Enabled by a Solution‐Processed Metal‐Doped Nickel Oxide Hole Injection Interfacial Layer-Reference-Cited by-同舟云学术

High‐Efficiency and Stable Quantum Dot Light‐Emitting Diodes Enabled by a Solution‐Processed Metal‐Doped Nickel Oxide Hole Injection Interfacial Layer

Published:2017-10-04 Issue:42 Volume:27 Page:1704278
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Cao Fan¹,Wang Haoran¹,Shen Piaoyang¹,Li Xiaomin¹,Zheng Yanqiong¹,Shang Yuequn²,Zhang Jianhua¹,Ning Zhijun²,Yang Xuyong¹

Affiliation:

1. Key Laboratory of Advanced Display and System Applications Education of Ministry Shanghai University 149 Yanchang Road 200072 China

2. School of Physical Science and Technology ShanghaiTech University 393 Middle Huaxia Road Pudong Shanghai 201210 China

Funder

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Shanghai University

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201704278

Reference29 articles.

1. Electrochromic Nanocrystal Quantum Dots

2. Bright, multicoloured light-emitting diodes based on quantum dots

3. High-performance crosslinked colloidal quantum-dot light-emitting diodes

4. Emergence of colloidal quantum-dot light-emitting technologies

5. High-efficiency quantum-dot light-emitting devices with enhanced charge injection

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