Coherent Spin Transport and Suppression of Spin Relaxation in InSb Nanowires with Single Subband Occupancy at Room Temperature-Reference-Cited by-同舟云学术

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Coherent Spin Transport and Suppression of Spin Relaxation in InSb Nanowires with Single Subband Occupancy at Room Temperature

Published:2014-07 Issue: Volume: Page:n/a-n/a
ISSN:1613-6810
Container-title:Small
language:en
Short-container-title:Small

Author:

Bandyopadhyay Saumil¹²,Hossain Md. Iftekhar³,Ahmad Hasnain³,Atulasimha Jayasimha²,Bandyopadhyay Supriyo³

Affiliation:

1. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology; Cambridge MA 02139 USA

2. Department of Mechanical and Nuclear Engineering; Virginia Commonwealth University; Richmond VA 23284 USA

3. Department of Electrical and Computer Engineering; Virginia Commonwealth University; Richmond VA 23284 USA

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/smll.201401022/fullpdf

Reference37 articles.

1. Tunneling between ferromagnetic films

2. Electrical detection of spin transport in lateral ferromagnet–semiconductor devices

3. Room temperature single GaN nanowire spin valves with FeCo/MgO tunnel contacts

4. Dimensionally constrained D'yakonov–Perel' spin relaxation in n-InGaAs channels: transition from 2D to 1D

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4. Metal-semiconductor-metal infrared photodetector based on PbTe nanowires with fast response and recovery time;Applied Surface Science;2017-05

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