Thermally Phase-Transformed In2Se3Nanowires for Highly Sensitive Photodetectors-Reference-Cited by-同舟云学术

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Thermally Phase-Transformed In2Se3Nanowires for Highly Sensitive Photodetectors

Published:2014-05-15 Issue:18 Volume:10 Page:3795-3802
ISSN:1613-6810
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language:en
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Author:

Kang Daegun¹,Rim Taiuk²,Baek Chang-Ki²,Meyyappan M.³,Lee Jeong-Soo⁴

Affiliation:

1. Department of Electrical Engineering; Pohang University of Science and Technology; Pohang Gyeongbuk 790-784 Republic of Korea

2. Creative IT Engineering; Pohang University of Science and Technology; Pohang Gyeongbuk 790-784 Republic of Korea

3. NASA Ames Research Center; Moffett Field CA 94035 USA

4. Division of IT Convergence Engineering; Pohang University of Science and Technology; Pohang Gyeongbuk 790-784 Republic of Korea

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/smll.201400373/fullpdf

Reference47 articles.

1. Toward Nanowire Electronics

2. Toward the Development of Printable Nanowire Electronics and Sensors

3. Size-Dependent Transport and Thermoelectric Properties of Individual Polycrystalline Bismuth Nanowires

4. Enhanced thermoelectric performance of rough silicon nanowires

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3. Photoelectric and pyroelectric performance modulated by the in-plane ferroelectric polarization in multi-functional α-In2Se3-based transistor;Applied Physics Letters;2023-05-01

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