Non-Volatile ReRAM Devices Based on Self-Assembled Multilayers of Modified Graphene Oxide 2D Nanosheets-Reference-Cited by-同舟云学术

Non-Volatile ReRAM Devices Based on Self-Assembled Multilayers of Modified Graphene Oxide 2D Nanosheets

Published:2016-09-27 Issue:44 Volume:12 Page:6167-6174
ISSN:1613-6810
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language:en
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Author:

Rani Adila¹,Velusamy Dhinesh Babu²,Kim Richard Hahnkee²,Chung Kyungwha¹,Mota Filipe Marques¹,Park Cheolmin²,Kim Dong Ha¹³

Affiliation:

1. Department of Chemistry and Nano Science; Division of Molecular and Life Sciences; College of Natural Sciences; Ewha Womans University; 52, Ewhayeodae-gil Seodaemun-gu Seoul 03760 Korea

2. Department of Materials Science and Engineering; Yonsei University; 50, Yonsei-ro Seodaemun-gu Seoul 03722 Korea

3. Division of Chemical Engineering and Materials Science; College of Engineering; Ewha Womans University; 52, Ewhayeodae-gil Seodaemun-gu Seoul 03760 Korea

Funder

Korean Government

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference32 articles.

1. Polymer electronic memories: Materials, devices and mechanisms

2. Systematic Study on the Sensitivity Enhancement in Graphene Plasmonic Sensors Based on Layer-by-Layer Self-Assembled Graphene Oxide Multilayers and Their Reduced Analogues

3. High throughput modification of chemically reduced graphene oxides by a conjugated block copolymer in non-polar medium

4. Nonvolatile resistive switching in graphene oxide thin films

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