Evidence for a Crucial Role Played by Oxygen Vacancies in LaMnO3 Resistive Switching Memories-Reference-Cited by-同舟云学术

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Evidence for a Crucial Role Played by Oxygen Vacancies in LaMnO3 Resistive Switching Memories

Published:2012-02-20 Issue:8 Volume:8 Page:1279-1284
ISSN:1613-6810
Container-title:Small
language:en
Short-container-title:Small

Author:

Xu Zhong-tang,Jin Kui-juan,Gu Lin,Jin Yu-ling,Ge Chen,Wang Can,Guo Hai-zhong,Lu Hui-bin,Zhao Rui-qiang,Yang Guo-zhen

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference52 articles.

1. www.itrs.net

2. A leak of information

3. Low-cost and nanoscale non-volatile memory concept for future silicon chips

4. Hysteretic resistance concepts in ferroelectric thin films

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