Vertically Formed Graphene Stripe for 3D Field-Effect Transistor Applications-Reference-Cited by-同舟云学术

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Vertically Formed Graphene Stripe for 3D Field-Effect Transistor Applications

Published:2016-10-26 Issue:3 Volume:13 Page:1602373
ISSN:1613-6810
Container-title:Small
language:en
Short-container-title:Small

Author:

Hong Seul Ki¹,Bong Jae Hoon¹,Cho Byung Jin¹,Hwang Wan Sik²

Affiliation:

1. Department of Electrical Engineering; KAIST; Daejeon 305-701 Korea

2. Department of Materials Engineering; Korea Aerospace University; Goyang 412-791 Korea

Funder

Ministry of Science, ICT and Future Planning

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/smll.201602373/fullpdf

Reference18 articles.

1. Considerations for Ultimate CMOS Scaling

2. K. S. Seol C. Park K. Hwang H. Choi D. Yoo S. Hur W. Hwang T. Nakanishi K. Park J. Lee 2015 U.S. Patent Application No. 13/072,078

3. Tunneling Transistors Based on Graphene and 2-D Crystals

4. The rise of graphene

5. Doping suppression and mobility enhancement of graphene transistors fabricated using an adhesion promoting dry transfer process

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1. Phase-shift controller for analog device application using 2-D material;Carbon Letters;2024-04-02

2. High on/off Current Ratio in Dual in-Plane Gate Spin Transistor Based on the VB Defect Hexagonal BN;ACS Applied Electronic Materials;2020-02-04

3. Length–dependence of conductance in benzothiadiazole molecular wires between graphene nanoribbon electrodes: Effect of conformational changes;Journal of Molecular Liquids;2018-11

4. A transport isolation by orbital hybridization transformation toward graphene nanoribbon-based nanostructure integration;Nanotechnology;2018-09-07

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