Electron Holographic Study of Semiconductor Light‐Emitting Diodes-Reference-Cited by-同舟云学术

Electron Holographic Study of Semiconductor Light‐Emitting Diodes

Published:2017-12-04 Issue:6 Volume:14 Page:1701996
ISSN:1613-6810
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language:en
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Author:

Li Luying¹,Hu Xiaokang¹,Gao Yihua¹

Affiliation:

1. Center for Nanoscale Characterization & Devices (CNCD)Wuhan National Laboratory for Optoelectronics (WNLO)Huazhong University of Science and Technology (HUST) Luoyu Road 1037 Wuhan 430074 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.201701996

Reference38 articles.

1. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes

2. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes

3. Nitride-based semiconductors for blue and green light-emitting devices

4. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

5. Electron Holography: Phase Imaging with Nanometer Resolution

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