Gate-Tunable Resonant Raman Spectroscopy of Bilayer MoS2-Reference-Cited by-同舟云学术

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Gate-Tunable Resonant Raman Spectroscopy of Bilayer MoS2

Published:2017-06-22 Issue:35 Volume:13 Page:1701039
ISSN:1613-6810
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language:en
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Author:

Lu Xin¹,Utama M. I. B.¹,Wang Xingzhi¹,Xu Weigao¹,Zhao Weijie¹,Owen Man Hon Samuel¹,Xiong Qihua¹²³^ORCID

Affiliation:

1. Division of Physics and Applied Physics; School of Physical and Mathematical Sciences; Nanyang Technological University; 637371 Singapore

2. NOVITAS; Nanoelectronics Center of Excellence; School of Electrical and Electronic Engineering; Nanyang Technological University; 639798 Singapore

3. MajuLab; CNRS-UNS-NUS-NTU International Joint Research Unit; UMI 3654 Singapore

Funder

National Research Foundation Singapore

Ministry of Education - Singapore

Nanyang Technological University

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/smll.201701039/fullpdf

Reference33 articles.

1. Tightly bound trions in monolayer MoS2

2. Exciton and Trion Dynamics in Bilayer MoS2

3. Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2

4. Electrical control of the valley Hall effect in bilayer MoS2 transistors

5. Charge-Induced Second-Harmonic Generation in Bilayer WSe2

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