Lattice Structure and Bandgap Control of 2D GaN Grown on Graphene/Si Heterostructures
Author:
Affiliation:
1. State Key Laboratory of Luminescent Materials and DevicesSouth China University of Technology Guangzhou 510640 China
2. Guangdong Choicore Optoelectronics Co., Ltd. Heyuan 517003 China
Funder
National Natural Science Foundation of China
China Postdoctoral Science Foundation
Publisher
Wiley
Subject
Biomaterials,Biotechnology,General Materials Science,General Chemistry
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.201802995
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1. Enhancement of Light Output Power from LEDs Based on Monolayer Colloidal Crystal
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4. Bias-Controlled Spectral Response in GaN/AlN Single-Nanowire Ultraviolet Photodetectors
5. Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces
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