Phase Engineering of 2D Tin Sulfides-Reference-Cited by-同舟云学术

Phase Engineering of 2D Tin Sulfides

Published:2016-04-21 Issue:22 Volume:12 Page:2998-3004
ISSN:1613-6810
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language:en
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Author:

Mutlu Zafer¹,Wu Ryan J.²,Wickramaratne Darshana³,Shahrezaei Sina¹,Liu Chueh¹,Temiz Selcuk¹,Patalano Andrew⁴,Ozkan Mihrimah³,Lake Roger K.³,Mkhoyan K. A.²,Ozkan Cengiz S.⁵

Affiliation:

1. Materials Science and Engineering Program; University of California; Riverside CA 92525 USA

2. Department of Chemical Engineering and Materials Science; University of Minnesota; Minneapolis MN 55455 USA

3. Department of Electrical and Computer Engineering; University of California; Riverside CA 92525 USA

4. Department of Chemistry; University of California; Riverside CA 92525 USA

5. Department of Mechanical Engineering; University of California; Riverside CA 92525 USA

Funder

STARnet centers

C-SPIN

FAME

MARCO and DARPA

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference44 articles.

1. Tin Disulfide—An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics

2. Synthesis, Characterization, and Electronic Structure of Single-Crystal SnS, Sn2S3, and SnS2

3. Deterministic Two-Dimensional Polymorphism Growth of Hexagonal n-Type SnS2 and Orthorhombic p-Type SnS Crystals

4. Phase-controlled synthesis and photocatalytic properties of SnS, SnS2 and SnS/SnS2 heterostructure nanocrystals

5. Optical properties of nanocrystalline SnS2 thin films

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