Subthreshold Performance of Dual-Material Gate CMOS Devices and Circuits for Ultralow Power Analog/Mixed-Signal Applications-Reference-Cited by-同舟云学术

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Subthreshold Performance of Dual-Material Gate CMOS Devices and Circuits for Ultralow Power Analog/Mixed-Signal Applications

Published:2016-12-02 Issue: Volume: Page:117-127
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Container-title:MOS Devices for Low-Voltage and Low-Energy Applications
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John Wiley & Sons Singapore Pte. Ltd

Reference21 articles.

1. Dual material gate (DMG) field-effect transistor;Long;IEEE Trans. Electron Devices,1999

2. Physics-based analytical modeling of potential and electrical field distribution in dual material gate (DMG)-MOSFET for improved hot electron effect and carrier transport efficiency;Saxena;IEEE Trans. Electron Devices,2002

3. Investigation of the novel attributes of a fully depleted dual-material gate SOI MOSFET;Chaudhry;IEEE Trans. Electron Devices,2004

4. Performance investigation of 50-nm insulated-shallow-extension gate-stack (ISEGaS) MOSFET for mixed mode applications;Kaur;IEEE Trans. Electron Devices,2007

5. Hot-carrier reliability and analog performance investigation of DMG-ISEGaS MOSFET;Kaur;IEEE Trans. Electron Devices,2007

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