A finite-volume scheme for the multidimensional quantum drift-diffusion model for semiconductors-Reference-Cited by-同舟云学术

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A finite-volume scheme for the multidimensional quantum drift-diffusion model for semiconductors

Published:2010-05-12 Issue:6 Volume:27 Page:1483-1510
ISSN:0749-159X
Container-title:Numerical Methods for Partial Differential Equations
language:en
Short-container-title:Numer. Methods Partial Differential Eq.

Author:

Chainais-Hillairet Claire,Gisclon Marguerite,Jüngel Ansgar

Funder

Bilateral German-French Procope Program of the DAAD

Austrian-French Program of the ÖAD

ESF program “Global and geometrical aspects of nonlinear partial differential equations (GLOBAL)”

WK “Differential Equations”

Austrian Science Fund

German Science Foundation

Publisher

Wiley

Subject

Applied Mathematics,Computational Mathematics,Numerical Analysis,Analysis

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/num.20592/fullpdf

Reference37 articles.

1. Electron states in narrow gate-induced channels in Si;Laux;Appl Phys Lett,1986

2. Self-consistent calculation of electron and hole inversion charges at silicon-silicon dioxide interfaces;Moglestue;J Appl Phys,1986

3. Nanoscale device modeling: the Green's function method;Datta;Superlattices Microstruct,2000

4. Wigner-function model of a resonant-tunneling semiconductor device;Frensley;Phys Rev B,1987

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