Author:
Mamutin V. V.,Vekshin V. A.,Davydov V. Yu.,Ratnikov V. V.,Kudriavtsev Yu. A.,Ber B. Ya.,Emtsev V. V.,Ivanov S. V.
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy
2. Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
3. , , , , , , and , in: Nanostructures: Physics and Technology, Eds. and , Ioffe Physico-Technical Institute, St. Petersburg 1999 (p. 521).
4. Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
5. Mg‐doped p‐type GaN grown by reactive molecular beam epitaxy
Cited by
32 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献