Thermally activated flux mechanism in Mg-doped InN epitaxial film-Reference-Cited by-同舟云学术

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Thermally activated flux mechanism in Mg-doped InN epitaxial film

Published:2017-06-26 Issue:28 Volume:97 Page:2564-2574
ISSN:1478-6435
Container-title:Philosophical Magazine
language:en
Short-container-title:Philosophical Magazine

Author:

Gunes Mustafa¹,Akyol Mustafa²,Ekicibil Ahmet²,Tiras Engin³

Affiliation:

1. Department of Materials Engineering, Adana Science and Technology University, Adana, Turkey

2. Department of Physics, Çukurova University, Adana, Turkey

3. Faculty of Science, Department of Physics, Anadolu University, Yunus Emre Campus, Eskisehir, Turkey

Funder

The Scientific and Technological Research Council of Turkey (TUBITAK)

Türkiye Bilimsel ve Teknolojik Araştirma Kurumu

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

https://www.tandfonline.com/doi/pdf/10.1080/14786435.2017.1343960

Reference23 articles.

1. Experimental Consideration of Optical Band-Gap Energy of Wurtzite InN

2. III–nitrides: Growth, characterization, and properties

3. Indium nitride (InN): A review on growth, characterization, and properties

4. Physical properties of InN with the band gap energy of 1.1eV

5. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

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