Metal-bonding-based hermetic wafer-level MEMS packaging technology using in-plane feedthrough: Hermeticity and high frequency characteristics of thick gold film feedthrough-Reference-Cited by-同舟云学术

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Metal-bonding-based hermetic wafer-level MEMS packaging technology using in-plane feedthrough: Hermeticity and high frequency characteristics of thick gold film feedthrough

Published:2019-01 Issue:2 Volume:206 Page:44-53
ISSN:0424-7760
Container-title:Electrical Engineering in Japan
language:en
Short-container-title:Electr Eng Jpn

Author:

Moriyama Masaaki¹²,Suzuki Yukio¹,Totsu Kentaro¹,Hirano Hideki¹,Tanaka Shuji¹²

Affiliation:

1. Micro System Integration Center; Tohoku University; Sendai Japan

2. Graduate School of Engineering; Tohoku University; Sendai Japan

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/eej.23193/fullpdf

Reference37 articles.

1. Wafer level packaging of MEMS;Esashi;J Micromech Microeng,2008

2. RF MEMS switches and switch circuits;Rebeiz;IEEE Microw Mag,2001

3. 3-D Integration and through-Silicon vias in MEMS and microsensors;Wang;J Microelectromech Syst,2015

4. Advances in piezoelectric PZT-based RF MEMS components and systems;Benoit;J Micromech Microeng,2017

5. Development of electrostatic actuator for ohmic-contact RF MEMS switch/relay;Seki;IEEJ Trans SM,2006

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1. Study on the Wetting Mechanism between Hot-Melt Nano Glass Powder and Different Substrates;Micromachines;2022-10-06

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