Thermal performance of nanoscale InGaP/GaAs collector-up heterojunction bipolar transistors investigated by the advanced optimization technique

Author:

Tseng Hsien-Cheng1,Wu Jeng-Ming1

Affiliation:

1. Nanotechnology R & D Center and Department of Electronic Engineering; Kun Shan University; Tainan 71003 Taiwan

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Reference12 articles.

1. Computer simulation of multifinger heterojunction bipolar transistor with self-heating and thermal coupling methods;Huang;Microelectronic Engineering,2004

2. The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistor;Liu;IEEE Transactions on Electron Devices,1996

3. Fraysse JP Vendier O Soulard M Auxemery P 2 W Ku-band coplanar MMIC HPA using HBT for flip-chip assembly IEEE MTT-S International Microwave Symposium Digest 2002 441 444

4. Heterostructure bipolar transistors and integrated circuits;Kroemer;Proceedings of the IEEE,1982

5. Thermal design studies of high-power heterojunction bipolar transistors;Gao;IEEE Transactions on Electron Devices,1989

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Accurate and efficient analysis of the upward heat flow in InGaP/GaAs HBTs through an automated FEM‐based tool and Design of Experiments;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2018-11-28

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