Homoepitaxial Growth of Large-Scale Highly Organized Transition Metal Dichalcogenide Patterns-Reference-Cited by-同舟云学术

Homoepitaxial Growth of Large-Scale Highly Organized Transition Metal Dichalcogenide Patterns

Published:2017-12-08 Issue:4 Volume:30 Page:1704674
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Chen Jianyi¹,Zhao Xiaoxu¹,Grinblat Gustavo²,Chen Zhongxin¹,Tan Sherman J. R.¹,Fu Wei¹,Ding Zijing¹,Abdelwahab Ibrahim¹,Li Yi²,Geng Dechao¹,Liu Yanpeng¹,Leng Kai¹,Liu Bo¹,Liu Wei¹,Tang Wei¹,Maier Stefan A.²³,Pennycook Stephen John⁴,Loh Kian Ping¹^ORCID

Affiliation:

1. Graphene Research Centre and Department of Chemistry; National University of Singapore; 6 Science Drive 2 Singapore 117546 Singapore

2. The Blackett Laboratory; Department of Physics; Imperial College London; London SW7 2AZ UK

3. Chair in Hybrid Nanosystems; Ludwig-Maximilians-Universität München; München 80799 Germany

4. Department of Materials Science & Engineering; National University of Singapore; Singapore 117575 Singapore

Funder

National Research Foundation Singapore

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference45 articles.

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2. Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions

3. Transition Metal Dichalcogenides and Beyond: Synthesis, Properties, and Applications of Single- and Few-Layer Nanosheets

4. Valley polarization in MoS2 monolayers by optical pumping

5. Control of valley polarization in monolayer MoS2 by optical helicity

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