Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature-Reference-Cited by-同舟云学术

Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature

Published:2019-06-11 Issue:30 Volume:31 Page:1902397
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Lo Chun‐Li¹^ORCID,Catalano Massimo²³,Khosravi Ava²,Ge Wanying⁴,Ji Yujin⁴,Zemlyanov Dmitry Y.⁵,Wang Luhua²,Addou Rafik²⁶,Liu Yuanyue⁴,Wallace Robert M.²,Kim Moon J.²,Chen Zhihong¹

Affiliation:

1. School of Electrical and Computer Engineering and Birck Nanotechnology Center Purdue University West Lafayette IN 47907 USA

2. Materials Science and Engineering Department The University of Texas at Dallas 800 West Campbell Road Richardson TX 75080 USA

3. Institute for Microelectronics and Microsystems National Council for Research (IMM‐CNR) Via Monteroni, ed. A3 73100 Lecce Italy

4. Texas Materials Institute and Department of Mechanical Engineering The University of Texas at Austin Austin TX 78712 USA

5. Birck Nanotechnology Center Purdue University West Lafayette IN 47907 USA

6. School of Chemical Biological, and Environmental Engineering Oregon State University Corvallis OR 93771 USA

Funder

Semiconductor Research Corporation

National Science Foundation

Welch Foundation

University of Texas at Austin

Office of Energy Efficiency and Renewable Energy

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201902397

Reference51 articles.

1. Pdf entitled “6_2014 ITRS 2.0_MoreMoore_R1.pdf” available under the link “2014 ITRS” and further link “2014 ITRS 2.0 FT White Papers” athttp://www.itrs2.net/itrs‐reports.html(accessed: June 2019).

2. 1-nm-thick graphene tri-layer as the ultimate copper diffusion barrier

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