In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory-Reference-Cited by-同舟云学术

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In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory

Published:2011-06-14 Issue:29 Volume:23 Page:3272-3277
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Choi Sang-Jun,Park Gyeong-Su,Kim Ki-Hong,Cho Soohaeng,Yang Woo-Young,Li Xiang-Shu,Moon Jung-Hwan,Lee Kyung-Jin,Kim Kinam

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference33 articles.

1. Who Wins the Nonvolatile Memory Race?

2. Reproducible switching effect in thin oxide films for memory applications

3. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

4. Nanoionics-based resistive switching memories

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