Flexible GaN Light-Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots-Reference-Cited by-同舟云学术

Flexible GaN Light-Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots

Published:2016-06-27 Issue:35 Volume:28 Page:7688-7694
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Chung Kunook¹,Yoo Hyobin²,Hyun Jerome K.³,Oh Hongseok¹,Tchoe Youngbin¹,Lee Keundong¹,Baek Hyeonjun¹,Kim Miyoung²,Yi Gyu-Chul¹

Affiliation:

1. Department of Physics and Astronomy; Institute of Applied Physics, and Research Institute of Advanced Materials; Seoul National University; Seoul 151-747 Korea

2. Department of Materials Science and Engineering; Research Institute of Advanced Materials; Seoul National University; Seoul 151-744 Korea

3. Department of Chemistry and Nano Science; Ewha Womans University; Seoul 120-750 Korea

Funder

Ministry of Science, ICT and Future Planning

Research Cooperation Program of Seoul National University

Yonsei University

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference35 articles.

1. Three-dimensional nanopillar-array photovoltaics on low-cost and flexible substrates

2. Materials and Mechanics for Stretchable Electronics

3. Injectable, Cellular-Scale Optoelectronics with Applications for Wireless Optogenetics

4. Flexible electronics under strain: a review of mechanical characterization and durability enhancement strategies

5. Flexible light-emitting diodes made from soluble conducting polymers

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