Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit-Reference-Cited by-同舟云学术

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit

Published:2010-07-20 Issue:36 Volume:22 Page:4002-4007
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Li Yao-Yi,Wang Guang,Zhu Xie-Gang,Liu Min-Hao,Ye Cun,Chen Xi,Wang Ya-Yu,He Ke,Wang Li-Li,Ma Xu-Cun,Zhang Hai-Jun,Dai Xi,Fang Zhong,Xie Xin-Cheng,Liu Ying,Qi Xiao-Liang,Jia Jin-Feng,Zhang Shou-Cheng,Xue Qi-Kun

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201000368/fullpdf

Reference29 articles.

1. Recent progress in electrodeposition of thermoelectric thin films and nanostructures

2. Holey and Unholey Semiconductors

3. Electrical and Thermal Properties ofBi2Te3

4. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

5. Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2 Te 3

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