SnSe/MoS 2 van der Waals Heterostructure Junction Field‐Effect Transistors with Nearly Ideal Subthreshold Slope
Author:
Affiliation:
1. Department of Chemistry and Biochemistry University of California Los Angeles CA 90095 USA
2. Department of Materials Science and Engineering University of California Los Angeles CA 90095 USA
Funder
Office of Naval Research
National Science Foundation
Publisher
Wiley
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201902962
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