Mass-spring model for elastic wave propagation in multilayered van der Waals metamaterials-Reference-Cited by-同舟云学术

Mass-spring model for elastic wave propagation in multilayered van der Waals metamaterials

Published:2024-07 Issue:7 Volume:45 Page:1107-1118
ISSN:0253-4827
Container-title:Applied Mathematics and Mechanics
language:en
Short-container-title:Appl. Math. Mech.-Engl. Ed.

Author:

Jing Yabin,Wang Lifeng,Gao Yuqiang

Abstract

AbstractMultilayered van der Waals (vdW) materials have attracted increasing interest because of the manipulability of their superior optical, electrical, thermal, and mechanical properties. A mass-spring model (MSM) for elastic wave propagation in multilayered vdW metamaterials is reported in this paper. Molecular dynamics (MD) simulations are adopted to simulate the propagation of elastic waves in multilayered vdW metamaterials. The results show that the graphene/MoS2 metamaterials have an elastic wave bandgap in the terahertz range. The MSM for the multilayered vdW metamaterials is proposed, and the numerical simulation results show that this model can well describe the dispersion and transmission characteristics of the multilayered vdW metamaterials. The MSM can predict elastic wave transmission characteristics in multilayered vdW metamaterials stacked with different two-dimensional (2D) materials. The results presented in this paper offer theoretical help for the vibration reduction of multilayered vdW semiconductors.

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s10483-024-3153-9.pdf

Reference39 articles.

1. DEAN, C. R., YOUNG, A. F., MERIC, I., LEE, C., WANG, L., SORGENFREI, S., WATANABE, K., TANIGUCHI, T., KIM, P., SHEPARD, K. L., and HONE, J. Boron nitride substrates for high-quality graphene electronics. Nature Nanotechnology, 5(10), 722–726 (2010)

2. BERTOLAZZI, S., KRASNOZHON, D., and KIS, A. Nonvolatile memory cells based on MoS2/graphene heterostructures. ACS Nano, 7(4), 3246–3252 (2013)

3. GUO, J., WANG, L. Y., YU, Y. W., WANG, P. Q., HUANG, Y., and DUAN, X. F. SnSe/MoS2 van der Waals heterostructure junction field-effect transistors with nearly ideal subthreshold slope. Advanced Materials, 31(49), 1902962 (2019)

4. SUN, X. X., ZHU, C. G., YI, J. L., XIANG, L., MA, C., LIU, H. W., ZHENG, B. Y., LIU, Y., YOU, W. X., ZHANG, W. J., LIANG, D. L., SHUAI, Q., ZHU, X. L., DUAN, H. G., LIAO, L., LIU, Y., LI, D., and PAN, A. L. Reconfigurable logic-in-memory architectures based on a two-dimensional van der Waals heterostructure device. Nature Electronics, 5(11), 752–760 (2022)

5. OH, G. H., AN, J. G., KIM, S. I., SHIN, J. C., PARK, J. H., and KIM, T. W. Ultralow subthreshold swing 2D/2D heterostructure tunneling field-effect transistor with ion-gel gate dielectrics. ACS Applied Electronic Materials, 5(1), 196–204 (2023)