The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics-Reference-Cited by-同舟云学术

The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics

Published:2014-09-29 Issue:42 Volume:26 Page:7241-7246
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Kim Jiye¹,Jang Jaeyoung¹,Kim Kyunghun¹,Kim Haekyoung²,Kim Se Hyun³,Park Chan Eon¹

Affiliation:

1. POSTECH Organic Electronics Laboratory; Department of Chemical Engineering; Pohang University of Science and Technology (POSTECH); 77 Cheongam-Ro Nam-Gu, Pohang Gyungbuk 790-784 Republic of Korea

2. School of Materials Science and Engineering; Yeungnam University; 280 Daehak-Ro Gyungsan Gyeongbuk 712-749 Republic of Korea

3. Department of Nano, Medical and Polymer Materials; Yeungnam University; 280 Daehak-Ro Gyungsan Gyeongbuk 712-749 Republic of Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference21 articles.

1. Flexible organic transistors and circuits with extreme bending stability

2. Ultralow-power organic complementary circuits

3. Reliability of Organic Field-Effect Transistors

4. Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon

5. Air-Operable, High-Mobility Organic Transistors with Semifluorinated Side Chains and Unsubstituted Naphthalenetetracarboxylic Diimide Cores: High Mobility and Environmental and Bias Stress Stability from the Perfluorooctylpropyl Side Chain

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