Multilevel Data Storage Memory Devices Based on the Controlled Capacitive Coupling of Trapped Electrons-Reference-Cited by-同舟云学术

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Multilevel Data Storage Memory Devices Based on the Controlled Capacitive Coupling of Trapped Electrons

Published:2011-02-25 Issue:18 Volume:23 Page:2064-2068
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Lee Jang-Sik,Kim Yong-Mu,Kwon Jeong-Hwa,Sim Jae Sung,Shin Hyunjung,Sohn Byeong-Hyeok,Jia Quanxi

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201004150/fullpdf

Reference51 articles.

1. A Floating Gate and Its Application to Memory Devices

2. A historical perspective on the development of MOS transistors and related devices

3. J. F. Scott C. A. P. Dearaujo Science 1989 246 1400

4. Fatigue-free ferroelectric capacitors with platinum electrodes

5. Lanthanum-substituted bismuth titanate for use in non-volatile memories

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