Controllable Co-segregation Synthesis of Wafer-Scale Hexagonal Boron Nitride Thin Films-Reference-Cited by-同舟云学术

Controllable Co-segregation Synthesis of Wafer-Scale Hexagonal Boron Nitride Thin Films

Published:2013-12-05 Issue:11 Volume:26 Page:1776-1781
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Zhang Chaohua¹,Fu Lei¹,Zhao Shuli¹,Zhou Yu¹,Peng Hailin¹,Liu Zhongfan¹

Affiliation:

1. Center for Nanochemistry; Beijing National Laboratory for Molecular Sciences; State Key Laboratory for Structural Chemistry of Unstable and Stable Species; College of Chemistry and Molecular Engineering; Academy for Advanced Interdisciplinary Studies; Peking University; Beijing 100871 P. R. China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201304301/fullpdf

Reference40 articles.

1. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal

2. Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure

3. Ultra-thin epitaxial films of graphite and hexagonal boron nitride on solid surfaces

4. Two-dimensional atomic crystals

5. Graphene-Like Two-Dimensional Materials

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